? 2008 ixys corporation, all rights reserved ds98555c(4/08) v dss = 70v i d25 = 280a r ds(on) 5m t rr 250 ns n-channel enhancement mode avalanche rated high dv/dt, low t rr symbol test conditions maximum ratings v dss t j = 25 c to 150 c 70 v v dgr t j = 25 c to 150 c, r gs = 1m 70 v v gss continuous 20 v v gsm transient 30 v i d25 t c = 25 c 280 a i l(rms) terminal current limit 100 a i dm t c = 25 c, pulse width limited by t jm 1120 a i ar t c = 25 c 180 a e ar t c = 25 c 60 mj e as t c = 25 c 3 j dv/dt i s i dm , v dd v dss , t j 150 c 20 v/ns p d t c = 25 c 600 w t j -55 ... +150 c t jm 150 c t stg -55 ... +150 c t l 1.6mm (0.062 in.) from case for 10s 300 c v isol 50/60hz, rms t = 1min 2500 v~ i isol 1ma t = 1s 3000 v~ m d mounting torque 1.5/13 nm/lb.in. terminal connection torque 1.3/ 11.5 nm/lb.in. weight 30 g ixfn280n07 g d s s minibloc, sot-227 b (ixfn) e153432 g = gate d = drain s = source either source terminal s can be used as the source terminal or the kelvin source (gate return) terminal. features z international standard package z minibloc with aluminium nitride isolation z low r ds(on) hdmos tm process z rugged polysilicon gate cell structure z unclamped inductive switching (uis) rated z low package inductance z fast intrinsic rectifier advantages z easy to mount z space savings z high power density symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. bv dss v gs = 0v, i d = 3ma 70 v v gs(th) v ds = v gs , i d = 8ma 2.0 4.0 v i gss v gs = 20v, v ds = 0v 200 na i dss v ds = v dss 100 a v gs = 0v t j = 125 c 2 ma r ds(on) v gs = 10v, i d = 120a, note 1 5 m hiperfet tm power mosfets single die mosfet applications z dc-dc converters z synchronous rectification z battery chargers z switched-mode and resonant-mode power supplies z dc choppers z temperature and lighting controls z low voltage relays
ixys reserves the right to change limits, test conditions, and dimensions. ixfn280n07 symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. g fs v ds = 15v, i d = 60a , note 1 47 78 s c iss 11.5 nf c oss v gs = 0v, v ds = 25v, f = 1mhz 4800 pf c rss 2650 pf r gi gate input resistance 0.74 t d(on) 40 ns t r 90 ns t d(off) 85 ns t f 50 ns q g(on) 360 nc q gs v gs = 10v, v ds = 35v, i d = 100a 60 nc q gd 182 nc r thjc 0.22 c /w r thcs 0.05 c /w source-drain diode symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. i s v gs = 0v 280 a i sm repetitive, pulse width limited by t jm 1120 a v sd i f = 100a, v gs = 0v, note 1 1.3 v t rr 250 ns q rm 1.2 c i rm 10 a note 1: pulse test, t 300 s; duty cycle, d 2%. sot-227b outline preliminary technical information the product presented herein is under development. the technical specifications offered are derived from data gathered during objective characterizations of preliminary engineering lots; but also may yet contain some information supplied during a pre-production design evaluation. ixys reserves the right to change limits, test conditions, and dimensions without notice. ixys mosfets and igbts are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 b1 6,683,344 6,727,585 7,005,734 b2 7,157,338b2 by one or more of the following u.s. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 b1 6,534,343 6,710,405 b2 6,759,692 7,063,975 b2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 b1 6,583,505 6,710,463 6,771,478 b2 7,071,537 i f = 50a, -di/dt = 100a/ s , v r = 50v resistive switching times v gs = 10v, v ds = 0.5 ? v dss , i d = 90a r g = 1 (external)
? 2008 ixys corporation, all rights reserved ixfn280n07 fig. 1. extended output characteristics @ 25oc 0 50 100 150 200 250 300 350 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 v ds - volts i d - amperes v gs = 15v 10v 9v 5v 6v 7v 8v fig. 2. output characteristics @ 125oc 0 40 80 120 160 200 240 280 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 v ds - volts i d - amperes v gs = 15v 10v 9v 8v 5v 6v 7v fig. 4. r ds(on) normalized to i d = 140a value vs. junction temperature 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5 1.6 1.7 1.8 1.9 -50 -25 0 25 50 75 100 125 150 t j - degrees centigrade r ds(on) - normalized v gs = 10v i d = 280a i d = 140a fig. 3. r ds(on) normalized to i d = 140a value vs.drain current 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5 1.6 1.7 1.8 0 50 100 150 200 250 300 350 i d - amperes r ds(on) - normalized v gs = 10v 15v - - - - t j = 125oc t j = 25oc fig. 5. maximum drain current vs. case temperature 0 10 20 30 40 50 60 70 80 90 100 110 120 -50 -25 0 25 50 75 100 125 150 t c - degrees centigrade i d - amperes external-lead current limit fig. 6. forward voltage drop of intrinsic diode 0 30 60 90 120 150 180 210 240 270 300 330 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 v sd - volts i s - amperes t j = 125oc t j = 25oc
ixys reserves the right to change limits, test conditions, and dimensions. ixfn280n07 ixys ref: f_280n07(9x)4-01-08 fig. 7. input admittance 0 20 40 60 80 100 120 140 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 v gs - volts i d - amperes t j = 125oc 25oc - 40oc fig. 8. transconductance 0 10 20 30 40 50 60 70 80 90 100 110 120 130 0 20 40 60 80 100 120 140 160 180 i d - amperes g f s - siemens t j = - 40oc 25oc 125oc fig. 10. gate charge 0 1 2 3 4 5 6 7 8 9 10 0 50 100 150 200 250 300 350 400 q g - nanocoulombs v gs - volts v ds = 35v i d = 100a i g = 10ma fig. 9. capacitance 1,000 10,000 100,000 0 5 10 15 20 25 30 35 40 v ds - volts capacitance - picofarads f = 1 mhz c iss c rss c oss fig. 11. forward-bias safe operating area 10 100 1,000 10,000 1 10 100 v ds - volts i d - amperes t j = 150oc t c = 25oc single pulse 1ms 100s r ds(on) limit 10ms dc external-lead limit 25s fig. 12. maximum transient thermal impedance 0.001 0.010 0.100 1.000 0.0001 0.001 0.01 0.1 1 10 pulse width - seconds z (th)jc - oc / w
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